Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

• Mengqi Fu,
• Roman Hartmann,
• Julian Braun,
• Sergej Andreev,
• Torsten Pietsch and
• Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

• oscillatory manner by the magnetic field in the nanowire-based devices. We present a toy model to qualitatively explain these observations. Keywords: AAO template; critical current; multilayered magnetic nanowires; spin-transfer torque; three-dimensional devices; Introduction Spin-transfer torque (STT) has

Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers

• Deepika Jhajhria,
• Dinesh K. Pandya and
• Sujeet Chaudhary

Beilstein J. Nanotechnol. 2018, 9, 2198–2208, doi:10.3762/bjnano.9.206

• . There are theoretical studies that suggest the possibility of manipulating the AF moment by spin transfer torque [12][13][14]. Only recently, FM/AF (NiO, IrMn)/heavy metal heterostructures have been extensively studied to demonstrate the efficient spin current transfer across the AF layer mediated by AF

Beyond Moore’s technologies: operation principles of a superconductor alternative

• Igor I. Soloviev,
• Nikolay V. Klenov,
• Sergey V. Bakurskiy,
• Mikhail Yu. Kupriyanov,
• Alexander L. Gudkov and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2017, 8, 2689–2710, doi:10.3762/bjnano.8.269

Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory

• Austin Deschenes,
• Sadid Muneer,
• Mustafa Akbulut,
• Ali Gokirmak and
• Helena Silva

Beilstein J. Nanotechnol. 2016, 7, 1676–1683, doi:10.3762/bjnano.7.160

Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

• Adrian Iovan,
• Marco Fischer,
• Roberto Lo Conte and
• Vladislav Korenivski

Beilstein J. Nanotechnol. 2012, 3, 884–892, doi:10.3762/bjnano.3.98

• mechanism behind this is the formation of atomic/nanoscale domain walls in the nanoconstriction under the spin-transfer torque (STT) from the spin accumulation at the Fe/FeCr interface. The switching in both directions occurs at one bias polarity, which is characteristic of the STT effect. The change in

• of the integrated devices were measured by the conventional four-point technique, with the device resistance defined as R(I) = V(I)/I. For more details on the spin-transfer-torque measurements see [29][30]. For more details on stimulated spin-photo-emission (spin lasing) see [15][24][25][26]. Tapping